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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2511

Title: Statistical aspects of the degradation of LDD nMOSFETs
Authors: ANDRIES, Ellen
DREESEN, Raf
CROES, Kristof
DE CEUNINCK, Ward
DE SCHEPPER, Luc
Groeseneken, G
Lo, KF
D'OLIESLAEGER, Marc
D'HAEN, Jan
Issue Date: 2002
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 42(9-11). p. 1409-1413
Abstract: The spread between hot-carrier degradation curves of LDD nMOSFETs, stressed at thesame level, is studied. It's observed that a large part of this variation can be explained by the difference in initial drain current I-d,I-sat. A relationship between the amount of degradation or equivalently the lifetime and I-d,I-sat is used to predict the degradation behaviour (at this stress level) or the lifetime of a single LDD nMOSFET from its value of I-d,I-sat. By introducing I-d/sat into the statistical analysis, the variance of the failure time distribution is reduced and a failure time distribution can be estimated at specific values of I-d,I-sat. The parameter I-d,I-sat can be used to select the more reliable LDD nMOSFETs out of a population. (C) 2002 Elsevier Science Ltd. All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium. XPEQT, B-3980 Tessenderlo, Belgium. IMEC, B-3001 Heverlee, Belgium. Chartered Semicond Mfg Ltd, Singapore 738406, Singapore.Andries, E, Limburgs Univ Ctr, Inst Mat Res, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2511
DOI: 10.1016/S0026-2714(02)00160-9
ISI #: 000178889900031
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2003
Appears in Collections: Research publications

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