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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2510

Title: High-resolution SILC measurements of thin SiO2 ultra low voltages
Authors: ARESU, Stefano
DE CEUNINCK, Ward
DREESEN, Raf
CROES, Kristof
ANDRIES, Ellen
MANCA, Jean
DE SCHEPPER, Luc
DEGRAEVE, Maria
Kaczer, B.
D'OLIESLAEGER, Marc
D'HAEN, Jan
Issue Date: 2002
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 42(9-11). p. 1485-1489
Abstract: In order to study in detail the kinetics of degradation at ultra low voltages, close to real life operating condition, SILC on ultra-thin SiO2 oxides was measured in-situ by using a high-resolution measurement technique. A large gate stress voltage range was measured from -3.1 V down to -1.5 V with a step of 0.2 V. Although the SILC-curves at low voltages show a different behaviour, no significant change in the degradation mechanisms could be observed proving that extrapolations of high voltage measurements to operating voltage are indeed possible, provided that the correct extrapolation model is used. (C) 2002 Elsevier Science Ltd. All rights reserved.
Notes: IMOMEC, IMEC Div, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium.Aresu, S, IMOMEC, IMEC Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2510
DOI: 10.1016/S0026-2714(02)00175-0
ISI #: 000178889900046
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2003
Appears in Collections: Research publications

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