Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24978

Title: Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage
Authors: Xu, Menglei
Bearda, Twan
Radhakrishnan, Hariharsudan S.
Filipic, Miha
Gordon, Ivan
Debucquoy, Maarten
Szlufcik, Jozef
Poortmans, Jef
Issue Date: 2017
Citation: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 11(9), p. 1-5 (Art N° 1700125)
Abstract: A detailed investigation of the laser damage to amorphous silicon (a-Si:H) layers patterned by laser ablation (LA) and wet chemical etching is presented. This approach can be applied to pattern the rear side of silicon hetero-junction interdigitated back-contact solar cells. Only the top sacrificial a-Si: H laser-absorbing layer of an a-Si:H/SiOx/a-Si:H/c-Si stack is ablated. Laser damage in the bottom a-Si:H layer and a-Si:H/c-Si interface is analyzed by both scanning electron microscopy and transmission electron microscopy. We show that the a-Si:H/c-Si passivation is degraded by laser damage and that this degradation can be diminished by increasing laser processing speed. This is attributed to a decrease of laser-irradiated area, and particularly smaller overlapping zones of adjacent laser pulses. The re-passivation quality after LA and wet etching is similar to that of as-passivated samples. This indicates that laser damage is not present in the bulk c-Si substrate but only in the a-Si: H passivation layer, which is removed during subsequent wet etching, thus allowing high quality repassivation.
Notes: [Xu, Menglei; Bearda, Twan; Radhakrishnan, Hariharsudan S.; Filipic, Miha; Gordon, Ivan; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium. [Xu, Menglei; Poortmans, Jef] Katholieke Univ Leuven, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Poortmans, Jef] Hasselt Univ, B-3500 Hasselt, Belgium.
URI: http://hdl.handle.net/1942/24978
DOI: 10.1002/pssr.201700125
ISI #: 000410132200001
ISSN: 1862-6254
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

Files in This Item:

Description SizeFormat
Published version1.06 MBAdobe PDF

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.