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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24409

Title: Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells
Authors: Sahayaraj, Sylvester
Brammertz, Guy
Vermang, Bart
Ranjbar, Samaneh
Meuris, Marc
Vleugels, Jef
Poortmans, Jef
Issue Date: 2017
Citation: THIN SOLID FILMS, 633(SI), p. 166-171
Abstract: The influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 degrees C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density Jsc) of these devices were affected severely. After annealing the solar cells at 200 degrees C in N-2 atmosphere the best devices degraded and poor devices improved. Combined physical and optoelectronic characterization of the solar cells showed that PDA modifies the bulk defect density and also surface composition which reflects in the solar cell performance. (C) 2016 Elsevier B.V. All rights reserved.
Notes: [Brammertz, Guy; Meuris, Marc] Imec Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Sahayaraj, Sylvester; Brammertz, Guy; Ranjbar, Samaneh; Meuris, Marc; Poortmans, Jef] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Sahayaraj, Sylvester; Vermang, Bart; Ranjbar, Samaneh; Poortmans, Jef] Imec Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium. [Sahayaraj, Sylvester; Vermang, Bart; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn ESAT, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Ranjbar, Samaneh] Univ Aveiro, Dept Fis I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal. [Vleugels, Jef] Katholieke Univ Leuven, Dept Mat Engn MTM, Kasteelpk Arenberg 44, B-3001 Heverlee, Belgium.
URI: http://hdl.handle.net/1942/24409
DOI: 10.1016/j.tsf.2016.09.055
ISI #: 000404802300033
ISSN: 0040-6090
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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