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|Title: ||Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method|
|Authors: ||Bhattacharya, Gourav|
Kamatchi Jothiramalingam, Sankaran
Srivastava, Shashi B.
Thomas, Joseph Palathinkal
Singh, Samarendra P.
Leung, Kam Tong
Van Bael, Marlies K.
Roy, Susanta Sinha
|Issue Date: ||2017|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||ELECTROCHIMICA ACTA, 246, p. 68-74|
|Abstract: ||One-dimensional diamond nanorods (DNRs) were fabricated from nanocrystalline diamond films using a facile combination of microwave plasma enhanced chemical vapor deposition and reactive ion etching (RIE) techniques. Structural and electrochemical properties of undoped and nitrogen doped DNRs were thoroughly investigated. A cyclic voltammetry study revealed the increase in density of charge carriers when doped with nitrogen. Mott Schottky analysis was implemented for the quantitative determination of the flat band potential, effective density of charge carriers and energy band diagram, which revealed that the undoped sample exhibit p-type behavior, whereas the nitrogen doped sample showed n-type behavior. Defect related damage due to graphitization and hydrogen termination in the undoped DNRs (during RIE) was correlated with the p-type conductivity. Nitrogen doping induces n-type conductivity and enhances effective density of charge carriers. (C) 2017 Elsevier Ltd. All rights reserved.|
|Notes: ||[Bhattacharya, Gourav; Srivastava, Shashi B.; Deshmukh, Sujit; Singh, Samarendra P.; Roy, Susanta Sinha] Shiv Nadar Univ, Sch Nat Sci, Dept Phys, Gautam Buddha Nagar 201314, Uttar Pradesh, India. [Sankaran, Kamatchi Jothiramalingam; Pobedinskas, Paulius; Van Bael, Marlies K.; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, Diepenbeek, Belgium. [Sankaran, Kamatchi Jothiramalingam; Pobedinskas, Paulius; Van Bael, Marlies K.; Haenen, Ken] IMEC Vzw, IMOMEC, Diepenbeek, Belgium. [Thomas, Joseph Palathinkal; Leung, Kam Tong] Univ Waterloo, WATLab, Waterloo, ON N2L 3G1, Canada. [Thomas, Joseph Palathinkal; Leung, Kam Tong] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada.|
|ISI #: ||000406942800009|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
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