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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24317

Title: Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films
Authors: Kamatchi Jothiramalingam, Sankaran
Srinivasu, K.
Yeh, C. J.
Thomas, J. P.
Drijkoningen, Sien
Pobedinskas, Paulius
Sundaravel, B.
Leou, K. C.
Leung, K. T.
Van Bael, Marlies K.
Schreck, M.
Lin, I. N.
Haenen, Ken
Issue Date: 2017
Citation: APPLIED PHYSICS LETTERS, 110(26), p. 1-5 (Art N° 261602)
Abstract: The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/mu m, a high current density of 25.5 mA/cm(2) (at 23.2 V/mu m), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films. Published by AIP Publishing.
Notes: [Sankaran, K. J.; Drijkoningen, S.; Pobedinskas, P.; Van Bael, M. K.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sankaran, K. J.; Drijkoningen, S.; Pobedinskas, P.; Van Bael, M. K.; Haenen, K.] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. [Srinivasu, K.; Yeh, C. J.; Leou, K. C.] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan. [Thomas, J. P.; Leung, K. T.] Univ Waterloo, WATLab, Waterloo, ON N2L 3G1, Canada. [Thomas, J. P.; Leung, K. T.] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada. [Sundaravel, B.] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India. [Schreck, M.] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany. [Lin, I. N.] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan.
URI: http://hdl.handle.net/1942/24317
DOI: 10.1063/1.4990393
ISI #: 000404627700012
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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