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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2408

Title: Evidence for source side injection hot carrier effects on lateral DMOS transistors
Authors: ARESU, Stefano
Van den Bosch, G
Groeseneken, G
Moens, P.
Wojciechowski, D
Gassot, P
Issue Date: 2004
Citation: MICROELECTRONICS RELIABILITY, 44(9-11). p. 1621-1624
Abstract: The hot carrier degradation behavior of lateral integrated DMOS transistors is studied in detail with a state-of-the-art, high-resolution measurement equipment. It has been demonstrated that two degradation mechanisms are present: electron mobility reduction due to interface trap formation and injection and trapping of hot electrons at the source side of the channel. It will be shown that the Source Side Injection mechanism gives rise to rather moderate changes of the linear drain current (I-d,I-lim) but significant changes of the saturation drain current (I-d,I-sat) and the threshold voltage (V-t). (C) 2004 Elsevier Ltd. All rights reserved.
Notes: IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC VZW, B-3001 Louvain, Belgium. Katholieke Univ Leuven, ESAT Dept, Louvain, Belgium. AMI Semicond Belgium BVBA, B-9700 Oudenaarde, Belgium.Aresu, S, IMEC VZW, Div IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.stefano.aresu@luc.ac.be
URI: http://hdl.handle.net/1942/2408
DOI: 10.1016/j.microrel.2004.07.080
ISI #: 000224280000059
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2005
Appears in Collections: Research publications

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