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|Title: ||Effect of diamond nucleation process on propagation losses of AlN/diamond SAW filter|
|Authors: ||Elmazria, O|
El Hakiki, M
Assouar, Mohamed B.
|Issue Date: ||2004|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 51(12). p. 1704-1709|
|Abstract: ||In this work, the effect of a diamond nucleation process on freestanding aluminium nitride (AlN)/diamond surface acoustic wave (SAW) device performances was studied. Before diamond deposition, silicon (Si) substrates have been mechanically nucleated, using an ultrasonic vibration table with submicron diamond slurry, and bias-enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of R-MS = 13 nm, whereas very low surface roughness (as low as RMS less than or equal to 1 nm) can be achieved on a freestanding BEN diamond layer. Propagation losses have been measured as a function of the operating frequency for the two nucleation techniques. Dispersion curves of phase velocities and electromechanical coupling coefficient (K-2) were determined experimentally and by calculation as a function of normalized thickness AlN film (kh(AlN) = 2pih(AlN)/lambda). Experimental results show that the propagation losses strongly depend on the nucleation technique, and that these losses are weakly increased with frequency when the BEN technique is used.|
|Notes: ||Univ H Poincare Nancy 1, LPMIA, UMR 7040, F-54506 Vandoeuvre Les Nancy, France. Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic. IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, IMO, B-3590 Diepenbeek, Belgium. CEA Saclay, DIMRI, SIAR, F-91191 Gif Sur Yvette, France.Elmazria, O, Univ H Poincare Nancy 1, LPMIA, UMR 7040, F-54506 Vandoeuvre Les Nancy, France.email@example.com|
|ISI #: ||000226247400013|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2006|
|Appears in Collections: ||Research publications|
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