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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2404

Title: Characterization of < 111 > diamond thin films by micro-Raman spectroscopy
Authors: Mermoux, Michel
Tajani, A
Marcus, B
Bustarret, E
Gheeraert, E
Koizumi, S
Issue Date: 2004
Citation: DIAMOND AND RELATED MATERIALS, 13(4-8). p. 886-890
Abstract: High-resolution confocal micro-Raman spectra show that for homoepitaxial growth on <111>-oriented surfaces the zone-center phonon peak of the epilayers may occur a few cm(-1) below the peak of the relaxed diamond. This indicates a strong tensile strain in the films, while close to the interface the substrate is under compression. This effect was observed in both phosphorus-doped and undoped epilayers, as well as on some facets of a polycrystalline sample. Results obtained on <111>-oriented films grown by microwave plasma chemical vapor deposition in three different laboratories are compared, providing some hints as to how such undesirable strain effects can be avoided. (C) 2003 Elsevier B.V. All rights reserved.
Notes: CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France. CNRS, Lab Electrochim & Physico Chim Mat & Interfaces, F-38402 St Martin Dheres, France. Limburgs Univ Ctr, Inst Mat Res, IMOMEC, B-3590 Diepenbeek, Belgium. Natl Inst Mat Sci, Adv Mat Lab, STA, Tsukuba, Ibaraki 3050044, Japan.Bustarret, E, CNRS, Etud Proprietes Elect Solides Lab, BP 166X, F-38042 Grenoble 9, France.etienne.bustarret@grenoble.cnrs.fr
URI: http://hdl.handle.net/1942/2404
DOI: 10.1016/j.diamond.2003.12.002
ISI #: 000221691100066
ISSN: 0925-9635
Category: A1
Type: Journal Contribution
Validation: ecoom, 2005
Appears in Collections: Research publications

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