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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2401

Title: Physical properties of polycrystalline aluminium nitride films deposited by magnetron sputtering
Authors: MORTET, Vincent
Morel, A
Vanecek, M
Issue Date: 2004
Citation: DIAMOND AND RELATED MATERIALS, 13(4-8). p. 1120-1124
Abstract: In combination with CVD diamond, an aluminium nitride (AlN) thin film is one of the most promising piezoelectric materials for surface acoustic wave (SAW) applications. One of the critical issues of SAW devices is the electromechanical coupling coefficient, which depends on the AlN film thickness and its mechanical and piezoelectric properties. In this work, properties of well (002) oriented AlN films deposited on silicon and fused quartz substrates by reactive DC pulsed magnetron sputtering were measured. The mechanical, electromechanical and optical properties of AlN film deposited under optimal conditions were determined. Novel methods, using an atomic force microscope (AFM), were used to measure the d(33) and d(31) piezoelectric coefficients. The d(33) piezoelectric coefficient measurement method allows a direct piezoelectric mapping. The experimental measurement results are in good agreement with the bulk values. (C) 2003 Elsevier B.V. All rights reserved.
Notes: Acad Sci Czech Republ, Inst Phys, CZ-16200 Prague 6, Czech Republic. Limburgs Univ Ctr, Inst Mat Res, IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. ENSAM, F-49035 Angers, France.Mortet, V, Acad Sci Czech Republ, Inst Phys, Cukrovarnicka 10, CZ-16200 Prague 6, Czech Republic.Mortet@fzu.cz
URI: http://hdl.handle.net/1942/2401
DOI: 10.1016/j.diamond.2003.10.082
ISI #: 000221691100112
ISSN: 0925-9635
Category: A1
Type: Journal Contribution
Validation: ecoom, 2005
Appears in Collections: Research publications

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