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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2399

Title: Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures
Authors: Remes, Zdenek
Uzan-Saguy, C.
Baskin, E.
Kalish, R.
Avigal, Y.
Nesladek, Milos
Koizumi, P.
Issue Date: 2004
Publisher: ELSEVIER SCIENCE SA
Citation: DIAMOND AND RELATED MATERIALS, 13(4-8). p. 713-717
Abstract: Resistivity and Hall effect measurements are applied to understand the electronic properties of homoepitaxially grown n- and p-type CVD diamond in the wide temperature range 10-900 K. To overcome the high dark resistivity at low temperature, carrier concentration is enhanced by photo-excitation. It is found that the lifetime of photo-excited carriers decreases significantly at low temperature whereas their mobility increases. It is suggested that the short lifetime and the continuous photo-excitation can lead to the non-equilibrium stationary distribution of the photo-excited carriers at low lattice temperature. The enhanced average kinetic energy of the photo-excited carriers can effectively reduce ionized impurity scattering hence increasing the carrier mobility. (C) 2003 Elsevier B.V. All rights reserved.
Notes: Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel. Acad Sci Czech Republ, Inst Phys, Prague 16200 6, Czech Republic. Mat Res Inst, B-3590 Diepenbeek, Belgium. Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan.Remes, Z, Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel.remes@fzu.cz
URI: http://hdl.handle.net/1942/2399
DOI: 10.1016/j.diamond.2003.11.027
ISI #: 000221691100032
ISSN: 0925-9635
Category: A1
Type: Journal Contribution
Validation: ecoom, 2005
Appears in Collections: Research publications

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