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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23981

Title: In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films
Authors: Meddeb, Hosny
Bearda, Twan
Abdulraheem, Yaser
Dimassi, Wissem
Ezzaouia, Hatem
Gordon, Ivan
Szlufcik, Jozef
Poortmans, Jef
Issue Date: 2016
Abstract: The influence of the plasma ignition condition during PECVD deposition from a silane/hydrogen mixture on the amorphous silicon passivation of crystalline silicon surface is investigated. The changes in this process step mainly consist in varying the power density for very brief durations in between 1 s and 3 s. We find that the ignition phase contributes significantly in the film growth, especially in the a-Si:H/c-Si interface formation. In particular, the deposition rate increases with ignition power density. TEM cross-section inspection presents a rougher a-Si:H/c-Si interface with higher plasma power and thus, a tendency for nano-clusters formation caused by the crystalline nature of the substrate. In-situ plasma diagnostics reveal the gradual raise up of IHa*/ISiH* with the power density leading to worse SiH* abstraction to the surface. Whereas, time-resolved optical emission spectroscopy explains the possible recombination mechanism in the plasma due to higher-silane related reactive species (HSRS) formation via polymerization reactions. Our results point out that the ignition conditions with a rather low power for longer time give the best passivation, resulting an effective lifetime up to 9 ms.
URI: http://hdl.handle.net/1942/23981
DOI: 10.1016/j.spmi.2016.05.038
ISI #: 000383308700029
ISSN: 0749-6036
Category: A1
Type: Journal Contribution
Validation: ecoom, 2017
Appears in Collections: Research publications

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