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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2393

Title: Optical spectroscopy of the density of gap states in ETP-deposited a-Si : H
Authors: Willekens, J
Brinza, M
Gungor, T
Adriaenssens, G.J.
Kessels, WMM
Smets, AHM
de Sanden, MCMV
Issue Date: 2004
Citation: JOURNAL OF NON-CRYSTALLINE SOLIDS, 338-40. p. 244-248
Abstract: The distribution and density of localized states in the band gap of hydrogenated amorphous silicon, as deposited by the expanding thermal plasma technique, were studied by means of a combined use of the constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS) and time-of-flight (TOE) transient photoconductivity, as well as by standard optical transmission measurements. Tauc optical gap and Urbach tail energy parameters were determined, together with estimates for the density of defect states in the gap, from the CPM and PDS absorption spectra. Analysis of the post-transit TOE signals gives a further set of independent values for the gap state density. (C) 2004 Elsevier B.V. All rights reserved.
Notes: Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Louvain, Belgium. Hacettepe Univ, Dept Engn Phys, TR-06532 Ankara, Turkey. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands.Adriaenssens, GJ, Katholieke Univ Leuven, Lab Halfgeleiderfys, Celestijnenlaan 200D, B-3001 Louvain, Belgium.guy.adri@fys.kuleuven.de
URI: http://hdl.handle.net/1942/2393
DOI: 10.1016/j.jnoncrysol.2004.02.078
ISI #: 000222219000053
ISSN: 0022-3093
Category: A1
Type: Journal Contribution
Validation: ecoom, 2005
Appears in Collections: Research publications

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