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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23232

Title: Straight imaging and mechanism behind grain boundary electron emission in Pt-doped ultrananocrystalline diamond films
Authors: Panda, Kalpataru
Inami, Eiichi
Sugimoto, Yoshiaki
Kamatchi Jothiramalingam, Sankaran
Lin, I-Nan
Issue Date: 2017
Citation: CARBON, 111, p. 8-17
Abstract: A detailed scanning tunneling microscopic (STM) investigation is carried out to directly image and understand the mechanism behind enhanced conductivity and electron field emission (EFE) properties for platinum (Pt) ion doped/post-annealed ultrananocrystalline diamond (UNCD) films. Straight imaging of conducting/non-conducting sites is mapped by dynamic scanning tunneling microscopy (D-STM). Energy dissipation mapping and the local current voltage measurements illustrate that grain boundaries are the conducting/emitting sites. Further, this fact is supported by the high resolution current imaging tunneling spectroscopy (CITS). The formation of abundant conducting sp(2) nanographitic phases along the diamond grain boundaries, confirmed from transmission electron microscopic examinations, is believed to be the genuine factor that helps for the easy transport of electrons and hence enhanced the conductivity/emission properties. The fabrication of these films with high conductivity and superior EFE properties is a direct and simple approach which opens up new prospects in flat panel displays and high brightness electron sources. Moreover, we expect the energy dissipation associated with assisted tunneling process of electrons from the tip of STM to sample surface, can be a very useful technique for imaging heterostructured semiconducting surfaces due to their electrical conductivity differences in nanometer scale, which can explain many physical and chemical properties. (C) 2016 Elsevier Ltd. All rights reserved.
Notes: [Panda, Kalpataru; Sugimoto, Yoshiaki] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan. [Inami, Eiichi] Hosei Univ, Res Ctr Micronano Technol, Tokyo 1840003, Japan. [Sankaran, K. J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Lin, I-Nan] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan.
URI: http://hdl.handle.net/1942/23232
DOI: 10.1016/j.carbon.2016.09.062
ISI #: 000389555500002
ISSN: 0008-6223
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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