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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2323

Title: Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures
Authors: Remes, Zdenek
Kalish, R.
Uzan-Saguy, C.
Baskin, E.
Nesladek, Milos
Koizumi, S.
Issue Date: 2003
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 199(1). p. 82-86
Abstract: DC photo-conductivity and photo-Hall effect measurements were applied for the first time to measure electron transport properties of two 2-4 x 10(18) cm(-3) P-doped n-type diamonds at low temperatures down to 10 K. The low IR photosensitivity, sub-linear variation of free-electron concentration with IR light intensity as well as their freeze-out at very low temperatures were observed and explained by the presence of non-uniformly distributed defect-induced localized states (traps) in the band gap. Electron mobilities of the order of 400-500 cm(2)/Vs were measured at 10 K decreasing with increasing temperature as T-1/2 to about 150-200 cm(2)/Vs at 300 K, in contrast to T-3/2 law expected for ionized impurity scattering. Lattice distortions extending to several nm around P atoms are discussed as possible scattering centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Notes: Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel. Acad Sci Czech Republ, Inst Phys, Prague 16200 6, Czech Republic. Inst Mat Res, B-3590 Diepenbeek, Belgium. Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan.Remes, Z, Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel.
URI: http://hdl.handle.net/1942/2323
DOI: 10.1002/pssa.200303802
ISI #: 000185422000016
ISSN: 0031-8965
Category: A1
Type: Journal Contribution
Validation: ecoom, 2004
Appears in Collections: Research publications

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