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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2309

Title: Novel in-plane gate devices on hydrogenated diamond surfaces
Authors: Garrido, JA
Nebel, CE
Todt, R
Amann, M.C.
WILLIAMS, Oliver
Jackman, R
NESLADEK, Milos
Stutzmann, M
Issue Date: 2003
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 199(1). p. 56-63
Abstract: Hydrogen-terminated diamond surfaces are very attractive for devices based on surface electronics. The hole channel that governs the surface conductivity and the simplicity of the surface patterning are key features which allow a large flexibility for device design. In-plane gate field effect transistors have been fabricated with the conductive channel separated from the ohmic gate contacts by insulating thin lines, obtained by using a combination of electron beam lithography with surface oxidation. Depletion regions spreading from the highly resistive oxidized lines which separate the channel and gate regions can be controlled by applying a voltage to both lateral gate contacts. A wire structure has been designed in such a way that the gate voltage effectively modulates the conductance of the channel. The channel modulation is discussed in terms of a quasi two-dimensional surface carrier density. The effect of surface defects on the transistor properties has also been investigated. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Notes: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany. Univ Coll London, London WC1 E7JE, England. Limburgs Univ Centrum, Mat Res Inst, B-3590 Diepenbeek, Belgium.Garrido, JA, Tech Univ Munich, Walter Schottky Inst, Coulombwall, D-85748 Garching, Germany.
URI: http://hdl.handle.net/1942/2309
DOI: 10.1002/pssa.200303823
ISI #: 000185422000012
ISSN: 0031-8965
Category: A1
Type: Journal Contribution
Validation: ecoom, 2004
Appears in Collections: Research publications

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