www.uhasselt.be
DSpace

Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2306

Title: A new method for the analysis of high-resolution SILC data
Authors: ARESU, Stefano
DE CEUNINCK, Ward
KNUYT, Gilbert
MERTENS, Johan
MANCA, Jean
DE SCHEPPER, Luc
DEGRAEVE, Maria
Kaczer, B.
D'OLIESLAEGER, Marc
D'HAEN, Jan
Issue Date: 2003
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 43(9-11). p. 1483-1488
Abstract: Stress-induced Leakage Current (SILC) on ultra-thin SiO2 was measured in-situ by using a high-resolution measurement technique. A broad gate stress voltage range was applied from -2.9 V down to -1.9 V with a voltage step of 0.2 V. The observed current increase corresponds both to an increase in positive charge trapping and to the growth of conduction paths through the oxide. In this article, a new method, based on the Nigam-model is proposed to determine the relevant model parameters. It has been observed that at low voltages the contribution of the charge-trapping component is drastically reduced. (C) 2003 Elsevier Ltd. All rights reserved.
Notes: IMOMEC, IMEC Div, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium.Aresu, S, IMOMEC, IMEC Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2306
DOI: 10.1016/S0026-2714(03)00263-4
ISI #: 000185791500023
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2004
Appears in Collections: Research publications

Files in This Item:

There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.