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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23044

Title: Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules
Authors: Yamamoto, Takashi
Janssens, Stoffel D.
Ohtani, Ryota
Takeuchi, Daisuke
Koizumi, Satoshi
Issue Date: 2016
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 109(18), p. 182102-1-182102-5
Abstract: The realization of low-resistance n-type diamond is required to form novel semiconducting devices. However, heavily doping with phosphorous, the most suitable electron donor, remains challenging. Here we demonstrate that the phosphorus incorporation efficiency in deposited diamond can be maximized when using the largest possible terrace width of vicinal {111}-substrates. Given step-flow-predominant crystal growth, the greater surface migration length of phosphorus-containing admolecules compared with those of carbon-containing parent species explain this. With our findings we create a model which provides a complementary perspective to explain large fluctuations in dopant incorporation efficiencies for p-type and n-type diamond. Our model can also explain conflicting models for admolecule motion responsible for diamond crystallization.
Notes: [Yamamoto, Takashi; Janssens, Stoffel D.; Ohtani, Ryota; Koizumi, Satoshi] NIMS, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan. [Yamamoto, Takashi; Takeuchi, Daisuke; Koizumi, Satoshi] AIST, Japan Sci & Technol Agcy JST, Adv Low Carbon Technol Res & Dev Program ALCA, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan. [Takeuchi, Daisuke] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan. [Yamamoto, Takashi] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/23044
DOI: 10.1063/1.4966287
ISI #: 000387900600010
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2017
Appears in Collections: Research publications

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