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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/22694

Title: Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates
Authors: Kamatchi Jothiramalingam, Sankaran
Manoharan, D.
Sundaravel, B.
Lin, I. N.
Issue Date: 2016
Citation: APPLIED PHYSICS LETTERS, 109(10), p. 41-45 (Art N° 101603)
Abstract: Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Omega cm)(-1) and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/mu m, high current density of 5.4 mA/cm(2) (@ 2.65 V/mu m), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films. Published by AIP Publishing.
Notes: [Sankaran, K. J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sankaran, K. J.] IMOMEC, IMEC VZW, B-3590 Diepenbeek, Belgium. [Manoharan, D.; Lin, I. N.] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan. [Sundaravel, B.] Mat Sci Grp, Indira Gandhi Ctr Atom Res, Kalpakkam 603102, Tamil Nadu, India.
URI: http://hdl.handle.net/1942/22694
DOI: 10.1063/1.4962537
ISI #: 000384402900007
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2017
Appears in Collections: Research publications

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