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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2265

Title: Filling porous silicon pores with poly(p phenylene vinylene)
Authors: Nguyen, TP
Le Rendu, P
Lakehal, M
de Kok, M
VANDERZANDE, Dirk
Bulou, A.
Bardeau, J.P.
Joubert, P
Issue Date: 2003
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 197(1). p. 232-235
Abstract: We have investigated hybrid organic-inorganic systems composed of silicon-porous silicon and poly(phenylene vinylene) (PPV) in order to fabricate new light emitting devices, having properties of both materials. The key concern in these systems is the control of the penetration of the polymer into the pores of the semiconductor to obtain the best contact between the materials. By optimizing the deposition parameters. we have successfully filled the porous silicon wafers with PPV as proved by microscopy and Raman analysis of the sample cross section. We have also shown that the contact between the silicon pores and the polymer did not change the structure of both materials.
Notes: Inst Mat Jean Rouxel, Lab Phys Cristalline, F-44322 Nantes 3, France. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium. Lab Phys Etat Condense, F-72085 Le Mans 09, France. IUT Lann, Lab Optron, F-22302 Lannion, France.Nguyen, TP, Inst Mat Jean Rouxel, Lab Phys Cristalline, F-44322 Nantes 3, France.
URI: http://hdl.handle.net/1942/2265
DOI: 10.1002/pssa.200306506
ISI #: 000183134400043
ISSN: 0031-8965
Category: A1
Type: Journal Contribution
Validation: ecoom, 2004
Appears in Collections: Research publications

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