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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/22074

Title: DNA detection with top-down fabricated silicon nanowire transistor arrays in linear operation regime
Authors: Schwartz, Miriam
Chien Nguyen, Thanh
Thang Vu, Xuan
Weil, Maryam
Wilhelm, Jannick
Wagner, Patrick
Thoelen, Ronald
Ingebrandt, Sven
Issue Date: 2016
Abstract: Silicon nanowire field-effect transistors (SiNW-FETs) are offering a label-free sensing of DNA molecules based on the detection of the biomolecules' charges. Typically, the charge accumulation at the solid-liquid interface is leading to a change in surface potential of the device. In other works, this effect is usually displayed as change in conductance of the nanowires. In this paper, we show that our topdown processed SiNW-FET devices can be regarded as long-channel, ion-sensitive field-effect transistor devices (ISFETs) and that their electronic characteristics can be fitted by an advanced MOSFET model taking narrow channel effects into account. In DNA experiments, changes in threshold voltage upon immobilization of capture DNA and hybridization with complementary target DNA were recorded as reported before. The signal amplitudes were scaling with different concentrations of electrolyte buffer as known from the commonly used Poisson-Boltzmann theory. In reports from other groups, the sensitivity of SiNW-FETs was reported to be superior compared to ISFETs and scaling effects were observed with smaller wires having higher sensitivities. From our experiments, it seems that the immobilization of the DNA to the wire structure is leading to two effects: firstly, the threshold voltage is changing, leading to a shift in the transistors' transfer characteristics similar to what was described for ISFET devices. In addition, upon DNA binding, a general increase in charge carrier density inside the nanowire is leading to an enhanced conductance. We assume that the latter effect is scaling with nanowire dimensions, while the surface effect is typically constant for all sensor structures.
Notes: [Schwartz, Miriam; Thanh Chien Nguyen; Xuan Thang Vu; Weil, Maryam; Ingebrandt, Sven] Univ Appl Sci Kaiserslautern, Dept Informat & Microsyst Technol, Amerikastr 1, D-66482 Zweibrucken, Germany. [Schwartz, Miriam; Thanh Chien Nguyen; Xuan Thang Vu; Wilhelm, Jannick; Ingebrandt, Sven] Res Dev Ctr, RAM Grp DE GmbH, Amerikastr 1, D-66482 Zweibrucken, Germany. [Xuan Thang Vu] Rhein Westfal TH Aachen, Dept Phys, Sommerfeldstr 14, D-52074 Aachen, Germany. [Wagner, Patrick] Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200d, B-3001 Louvain, Belgium. [Wagner, Patrick; Thoelen, Ronald] Hasselt Univ, Inst Mat Res, Agoralaan Bldg D, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/22074
DOI: 10.1002/pssa.201532919
ISI #: 000378398900019
ISSN: 1862-6300
Category: A1
Type: Journal Contribution
Validation: ecoom, 2017
Appears in Collections: Research publications

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