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|Title: ||Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond|
|Authors: ||Balasubramaniam, Yaso|
Janssens, Stoffel D.
|Issue Date: ||2016|
|Citation: ||Applied physics letters, 109(6) (Art N° 062105)|
|Abstract: ||The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm/h. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10^16 cm−3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.|
|ISI #: ||000383183600025|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2017|
|Appears in Collections: ||Research publications|
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|Published version||713.26 kB||Adobe PDF|
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