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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/22038

Title: Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond
Authors: Balasubramaniam, Yaso
Pobedinskas, Paulius
Janssens, Stoffel D.
Sakr, G.
Jomard, F.
Turner, S.
Lu, Y.-G.
Dexters, Wim
Soltani, A.
Verbeeck, J.
Barjon, J.
Nesladek, Milos
Haenen, Ken
Issue Date: 2016
Citation: Applied physics letters, 109(6) (Art N° 062105)
Abstract: The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm/h. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10^16 cm−3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.
URI: http://hdl.handle.net/1942/22038
DOI: 10.1063/1.4960970
ISI #: 000383183600025
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2017
Appears in Collections: Research publications

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