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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/21804

Title: Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations
Authors: Brammertz, Guy
Buffière, Marie
Verbist, Christophe
Oueslati, Souhaib
Bekaert, Jonas
ElAnzeery, Hossam
Ben Messaoud, Khaled
Sahayaraj, Sylvester
Batuk, Maria
Hadermann, Joke
Koeble, Christine
Meuris, Marc
Poortmans, Jef
Issue Date: 2015
Publisher: IEEE
Citation: Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Abstract: We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability.
Notes: [Brammertz, Guy; Sahayaraj, Sylvester; Meuris, Marc] Imec Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Brammertz, Guy; Sahayaraj, Sylvester; Meuris, Marc; Poortmans, Jozef] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Buffiere, Marie; Oueslati, Souhaib; ElAnzeery, Hossam; Ben Messaoud, Khaled; Poortmans, Jozef] Imec Partner Solliance, B-3001 Leuven, Belgium. [Buffiere, Marie; Sahayaraj, Sylvester; Poortmans, Jozef] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Heverlee, Belgium. [Verbist, Christophe; Batuk, Maria; Hadermann, Joke] Univ Antwerp, Electrton Microscopy Mat Sci EMAT, B-2020 Antwerp, Belgium. [Oueslati, Souhaib; ElAnzeery, Hossam; Ben Messaoud, Khaled] KACST Intel Consortium Ctr Excellence Nanomfg App, Riyadh, Saudi Arabia. [Oueslati, Souhaib] Fac Sci Tunis, Dept Phys, El Manar, Tunisia. [Bekaert, Jonas] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium. [ElAnzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Ben Messaoud, Khaled] Univ Tunis El Manar, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia. [Koeble, Christine] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany.
URI: http://hdl.handle.net/1942/21804
DOI: 10.1109/PVSC.2015.7355797
ISI #: 000369992900207
ISBN: 9781479979448
ISSN: 0160-8371
Category: C1
Type: Proceedings Paper
Validation: ecoom, 2017
Appears in Collections: Research publications

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