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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/19825

Title: Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se-2 solar cells
Authors: Ben Messaoud, Khaled
Buffiere, Marie
Brammertz, Guy
ElAnzeery, Hossam
Oueslati, Souhaib
Hamon, Jonathan
Kniknie, Bas J.
Meuris, Marc
Amlouk, Mosbah
Poortmans, Jef
Issue Date: 2015
Publisher: WILEY-BLACKWELL
Citation: PROGRESS IN PHOTOVOLTAICS, 23 (11), p. 1608-1620
Abstract: The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu2ZnSnSe4 (CZTSe) thin-film solar cells, by using a Cd2+ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se-2 (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7min at 70 degrees C using a basic solution of cadmium acetate. X-ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density-voltage (J-V), external quantum efficiency, and drive-level capacitance profiling measurements. For the CZTSe-based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency () from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R-S) of the dark and light J-V, as determined using the one-diode model. The crossover effect between dark and light J-V curves is also significantly reduced by Cd PE treatment. Copyright (c) 2015 John Wiley & Sons, Ltd.
Notes: [Ben Messaoud, Khaled; ElAnzeery, Hossam; Oueslati, Souhaib] KACST Intel Consortium Ctr Excellence Nanomfg App, Riyadh, Saudi Arabia. [Ben Messaoud, Khaled; Brammertz, Guy; ElAnzeery, Hossam; Oueslati, Souhaib; Meuris, Marc] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Ben Messaoud, Khaled; Brammertz, Guy; Oueslati, Souhaib; Meuris, Marc] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Ben Messaoud, Khaled; Amlouk, Mosbah] Univ Tunis El Manar, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia. [Amlouk, Mosbah] Univ Carthage, Fac Sci Bizerte, Dept Phys, Bizerte 7021, Tunisia. [Buffiere, Marie; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Buffiere, Marie; Poortmans, Jef] IMEC, B-3001 Louvain, Belgium. [ElAnzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Hamon, Jonathan] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France. [Kniknie, Bas J.] TNO, NL-5656 AE Eindhoven, Netherlands. [Oueslati, Souhaib] Univ Tunis El Manar, Fac Sci Tunis, Tunis 2092, Tunisia.
URI: http://hdl.handle.net/1942/19825
DOI: 10.1002/pip.2599
ISI #: 000362796500017
ISSN: 1062-7995
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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