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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18903

Title: Investigation of Properties Limiting Efficiency in Cu2ZnSnSe4-Based Solar Cells
Authors: BRAMMERTZ, Guy
Oueslati, Souhaib
Buffiere, Marie
Bekaert, Jonas
El Anzeery, Hossam
Ben Messaoud, Khaled
Sahayaraj, Sylvester
Nuytten, Thomas
Koeble, Christine
Poortmans, Jozef
Issue Date: 2015
Citation: IEEE Journal of Photovoltaics, 5 (2), p. 649-655
Abstract: We have investigated different nonidealities in Cu2ZnSnSe4-CdS-ZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorber-buffer heterojunction leading to a strong crossover behavior between dark and illuminated current-voltage curves. In addition, a barrier of about 130 meV is present at the Mo-absorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.
Notes: [Brammertz, Guy; Oueslati, Souhaib; El Anzeery, Hossam; Ben Messaoud, Khaled; Sahayaraj, Sylvester; Meuris, Marc] IMEC Div IMOMEC, B-3590 Diepenbeek, Belgium. [Brammertz, Guy; Oueslati, Souhaib; El Anzeery, Hossam; Ben Messaoud, Khaled; Sahayaraj, Sylvester; Meuris, Marc] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Oueslati, Souhaib; El Anzeery, Hossam; Ben Messaoud, Khaled] KACST, Intel Consortium Ctr Excellence Nanomfg Applicat, Riyadh, Saudi Arabia. [Oueslati, Souhaib; Ben Messaoud, Khaled] Univ Tunis El Manar, Fac Sci Tunis, Tunis 2092, Tunisia. [Buffiere, Marie; Nuytten, Thomas; Poortmans, Jozef] IMEC, B-3001 Leuven, Belgium. [Buffiere, Marie; Poortmans, Jozef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Bekaert, Jonas] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium. [El Anzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Koeble, Christine] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany.
URI: http://hdl.handle.net/1942/18903
DOI: 10.1109/JPHOTOV.2014.2376053
ISI #: 000353524800026
ISSN: 2156-3381
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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