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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18848

Title: Influence of substrate potential on a-Si: H passivation of Si foils bonded to glass
Authors: Granata, S. N.
Bearda, Twan
Xu, M. L.
Abdulraheem, Yaser
Gordon, I.
Mertens, Robert
POORTMANS, Jef
Issue Date: 2015
Publisher: ELSEVIER SCIENCE SA
Citation: THIN SOLID FILMS, 579, p. 9-13
Abstract: In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si: H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si: H surface passivation. (C) 2015 Elsevier B.V. All rights reserved.
Notes: [Granata, S. N.; Xu, M. L.; Mertens, R.; Poortmans, J.] Katholieke Univ Leuven, ESAT, B-3000 Louvain, Belgium. [Granata, S. N.; Bearda, T.; Xu, M. L.; Gordon, I.; Mertens, R.; Poortmans, J.] IMEC, B-3001 Heverlee, Belgium. [Xu, M. L.] Tech Univ Dresden, D-01069 Dresden, Germany. [Abdulraheem, Y.] Kuwait Univ, Safat 13060, Kuwait. [Poortmans, J.] Hasselt Univ, B-3500 Hasselt, Belgium.
URI: http://hdl.handle.net/1942/18848
DOI: 10.1016/j.tsf.2015.02.044
ISI #: 000352219700002
ISSN: 0040-6090
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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