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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18844

Title: Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu-Zn-Ge precursor layers
Authors: Buffiere, M.
ElAnzeery, H.
Oueslati, S.
Ben Messaoud, Khaled
Issue Date: 2015
Citation: THIN SOLID FILMS, 582, p. 171-175
Abstract: Cu2ZnGeSe4 (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H2Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 degrees C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. (C) 2014 Elsevier B.V. All rights reserved.
Notes: [Buffiere, M.; ElAnzeery, H.; Oueslati, S.; Ben Messaoud, K.; Poortmans, J.] Inter Partner Solliance, Leuven, Belgium. [Buffiere, M.; Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn ESAT, Heverlee, Belgium. [ElAnzeery, H.; Oueslati, S.; Ben Messaoud, K.] KACST Intel Consortium, Ctr Excellence Nanomfg Applicat, Riyadh, Saudi Arabia. [ElAnzeery, H.] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Oueslati, S.; Ben Messaoud, K.] Fac Sci Tunis, Dept Phys, El Manar, Tunisia. [Brammertz, G.; Meuris, M.] IMEC, IMOMEC Partner Solliance, Diepenbeek, Belgium. [Brammertz, G.; Meuris, M.] Hasselt Univ, Inst Mat Res IMO, Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/18844
DOI: 10.1016/j.tsf.2014.09.024
ISI #: 000352225900037
ISSN: 0040-6090
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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