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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18686

Title: Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
Authors: Meddeb, H.
Bearda, Twan
Payo, M. Recaman
Abdelwahab, I.
Abdulraheem, Yaser
Ezzaouia, H.
Gordon, I.
Szlufcik, J.
Issue Date: 2015
Citation: APPLIED SURFACE SCIENCE, 328, p. 140-145
Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm(2) and below. (C) 2014 Elsevier B.V. All rights reserved.
Notes: [Meddeb, H.] KACST, Intel Consortium Ctr Excellence Nano Mfg Applicat, Riyadh, Saudi Arabia. [Meddeb, H.; Bearda, T.; Payo, M. Recaman; Abdelwahab, I.; Gordon, I.; Szlufcik, J.; Poortmans, J.] IMEC, B-3001 Louvain, Belgium. [Meddeb, H.; Ezzaouia, H.] Res & Technol Ctr Energy, Photovolta Dept, Tunis 2050, Tunisia. [Meddeb, H.] Univ Carthage, Fac Sci, Bizerte, Tunisia. [Abdulraheem, Y.] Kuwait Univ, Coll Engn & Petr, Dept Elect Engn, Safat 13060, Kuwait. [Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Louvain, Belgium. [Poortmans, J.] Univ Hasselt, Fac Sci, B-3500 Hasselt, Belgium. hosny.meddeb@gmail.com
URI: http://hdl.handle.net/1942/18686
DOI: 10.1016/j.apsusc.2014.11.180
ISI #: 000349615800016
ISSN: 0169-4332
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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