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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18684

Title: Study of alternative back contacts for thin film Cu2ZnSnSe4-based solar cells
Authors: Oueslati, Souhaib
BRAMMERTZ, Guy
Buffiere, Marie
ElAnzeery, Hossam
Mangin, Denis
ElDaif, Ounsi
Touayar, Oualid
Koble, Christine
MEURIS, Marc
POORTMANS, Jef
Issue Date: 2015
Publisher: IOP PUBLISHING LTD
Citation: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (3)
Abstract: Cu2ZnSnSe4 thin film solar cells are usually fabricated on a soda lime glass substrate with a molybdenum (Mo) back contact. It is suspected that degradation in electrical performance occurs due to the formation of a barrier between the absorber and Mo back contact. To overcome such degradation, Titanium Nitride (TiN), Titanium Tungsten (TiW), Chromium (Cr), Titanium (Ti) and Aluminum (Al) deposited on Mo-coated glass substrates are investigated as alternative back contact materials. Physical and electrical characterization as well as photoluminescence measurements are performed. Compositional analysis of the absorber layer on the metallized substrates identifies Mo, TiN and TiW as being the most inert during the formation of Cu2ZnSnSe4. On the other hand, Ti and Cr reacted with Se during selenization, thereby affecting the growth of the absorber, leading to low conversion efficiency. For Al, the absorber layer was etched after the standard potassium cyanide etch, hence, cannot be used as a back contact. The best device efficiencies obtained are 8.8% on TiN, 7.5% on Mo and 5.9% on TiW, respectively. The TiN back contact provides the lowest barrier value of about 15 meV which could be considered as a good ohmic contact.
Notes: [Oueslati, Souhaib; ElAnzeery, Hossam] CENA, KACST Intel Consortium, Riyadh, Saudi Arabia. [Oueslati, Souhaib; Brammertz, Guy; ElAnzeery, Hossam; Meuris, Marc] Imec Div IMOMEC Partner Solliance, B-3590 Diepenbeek, Belgium. [Oueslati, Souhaib; Brammertz, Guy; ElAnzeery, Hossam; Meuris, Marc] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Oueslati, Souhaib] Univ Tunis El Manar, Dept Phys, Fac Sci Tunis, Tunis 2092, Tunisia. [ElAnzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Buffiere, Marie; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Buffiere, Marie; ElDaif, Ounsi; Poortmans, Jef] Imec Partner Solliance, B-3001 Leuven, Belgium. [Oueslati, Souhaib; Touayar, Oualid] Univ Carthage, Natl Inst Appl Sci & Technol, INSAT, Res Lab MMA, Carthage, Tunisia. [Koble, Christine] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany. [Mangin, Denis] Univ Lorraine, Inst Jean Lamour, Parc Saurupt, F-54011 Nancy, France.
URI: http://hdl.handle.net/1942/18684
DOI: 10.1088/0022-3727/48/3/035103
ISI #: 000348300700004
ISSN: 0022-3727
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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