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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18187

Title: Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
Authors: Ohtani, Ryota
Yamamoto, Takashi
JANSSENS, Stoffel
Yamasaki, Satoshi
Koizumi, Satoshi
Issue Date: 2014
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 105 (23)
Abstract: Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.
Notes: [Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Koizumi, Satoshi] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan. [Janssens, Stoffel D.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Yamasaki, Satoshi] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan. [Yamasaki, Satoshi; Koizumi, Satoshi] Japan Sci & Technol Agcy JST, AIST, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3058568, Japan.
URI: http://hdl.handle.net/1942/18187
DOI: 10.1063/1.4903779
ISI #: 000346266000048
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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