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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18116

Title: Effect of Binder Content in Cu-In-Se Precursor Ink on the Physical and Electrical Properties of Printed CuInSe2 Solar Cells
Authors: Buffiere, M.
Zaghi, A. E.
Lenaers, N.
Batuk, Maria
Khelifi, S.
DRIJKONINGEN, Jeroen
Hamon, J.
Stesmans, A.
Kepa, J.
Afanas'ev, V. V.
Hadermann, J.
D'HAEN, J.
MANCA, Jean
Vleugels, J.
MEURIS, Marc
POORTMANS, Jef
Issue Date: 2014
Publisher: AMER CHEMICAL SOC
Citation: JOURNAL OF PHYSICAL CHEMISTRY C, 118 (47), p. 27201-27209
Abstract: Printed chalcopyrite thin films have attracted considerable attention in recent years due to their potential in the high-throughput production of photovoltaic devices. To improve the homogeneity of printed CuInSe2 (CISe) layers, chemical additives such as binder can be added to the precursor ink. In this contribution, we investigate the influence of the dicyandiamide (DCDA) content, used as a binder in the precursor ink, on the physical and electrical properties of printed CISe solar cells. It is shown that the use of the binder leads to a dense absorber, composed of large CISe grains close to the surface, while the bulk of the layer consists of CISe crystallites embedded in a CuxS particle based matrix, resulting from the limited sintering of the precursor in this region. The expected additional carbon contamination of the CISe layer due to the addition of the binder appears to be limited, and the optical properties of the CISe layer are similar to the reference sample without additive. The electrical characterization of the corresponding CISe/CdS solar cells shows a degradation of the efficiency of the devices, due to a modification in the predominant recombination mechanisms and a limitation of the space charge region width when using the binder; both effects could be explained by the inhomogeneity of the bulk of the CISe absorber and high defect density at the CISe/CuxS-based matrix interface.
Notes: [Buffiere, M.; Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Heverlee, Belgium. [Buffiere, M.; Zaghi, A. E.; Lenaers, N.; Poortmans, J.] IMEC, B-3001 Leuven, Belgium. [Zaghi, A. E.; Lenaers, N.; Vleugels, J.] Katholieke Univ Leuven, Dept Mat Engn MTM, B-3001 Heverlee, Belgium. [Batuk, M.; Hadermann, J.] Univ Antwerp, B-2020 Antwerp, Belgium. [Khelifi, S.] Univ Ghent, Elect & Informat Syst Dept ELIS, B-9000 Ghent, Belgium. [Drijkoningen, J.; D'Haen, J.; Manca, J.; Meuris, M.] IMEC, B-3590 Diepenbeek, Belgium. [Drijkoningen, J.; D'Haen, J.; Manca, J.; Meuris, M.; Poortmans, J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Stesmans, A.; Kepa, J.; Afanas'ev, V. V.] Katholieke Univ Leuven, Dept Phys & Astron FYS, B-3001 Leuven, Belgium. [Buffiere, M.; Zaghi, A. E.; Lenaers, N.; Batuk, M.; Khelifi, S.; Drijkoningen, J.] SIM Vzw, B-9052 Zwijnaarde, Belgium. [Hamon, J.] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France.
URI: http://hdl.handle.net/1942/18116
DOI: 10.1021/jp507209h
ISI #: 000345722400003
ISSN: 1932-7447
Category: A1
Type: Journal Contribution
Validation: ecoom, 2016
Appears in Collections: Research publications

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