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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/17052

Title: Silicone oxidation for a-Si:H passivation of wafers bonded to glass
Authors: Granata, Stefano Nicola
Bearda, Twan
Beaucarne, Guy
Abdulraheem, Yaser
Gordon, Ivan
POORTMANS, Jef
Mertens, Robert
Issue Date: 2014
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 8 (5), p. 395-398
Abstract: A possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O-2 plasma and it is successfully tested on three different silicones. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Notes: [Granata, Stefano Nicola; Poortmans, Jef; Mertens, Robert] Katholieke Univ Leuven, ESAT, B-3001 Heverlee, Belgium. [Granata, Stefano Nicola; Bearda, Twan; Gordon, Ivan; Poortmans, Jef; Mertens, Robert] IMEC, B-3001 Heverlee, Belgium. [Beaucarne, Guy] Dow Corning, B-7180 Seneffe, Belgium. [Abdulraheem, Yaser] Kuwait Univ, Dept Elect Engn, Safat 13060, Kuwait. [Poortmans, Jef] Hasselt Univ, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/17052
DOI: 10.1002/pssr.201409081
ISI #: 000336495000004
ISSN: 1862-6254
Category: A1
Type: Journal Contribution
Validation: ecoom, 2015
Appears in Collections: Research publications

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