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|Title: ||Structural and dielectric properties of parylene-VT4 thin films|
|Authors: ||Kahouli, A.|
Laithier, J. -F.
Garden, J. -L.
|Issue Date: ||2014|
|Citation: ||MATERIALS CHEMISTRY AND PHYSICS, 143 (3), p. 908-914|
|Abstract: ||58% semi-crystalline thin parylene-VT4 (eH2CeC6F4eCH2 )n films, have been investigated by dielectric spectroscopy for temperature and frequency ranges of [ 120 to 380 C] and [0.1e105 Hz] respectively. The study comprises a detailed investigation of the dielectric constant, dielectric loss and AC conductivity of this fluoropolymer. Dielectric behavior of parylene-VT4 is represented by a low dielectric constant with values in the range of 2.05e2.35 while the dielectric losses indicate the presence of two relaxation processes.
Maxwell Wagner Sillars (MWS) polarization at the amorphous/crystalline interfaces with activation energy of 1.6 eV is due to the oligomer orientation. Electrical conductivity obeys to the well-known Jonscher law. The plateau in the low frequency part of this conductivity is temperature-dependent and follows an Arrhenius behavior with activation energy of 1.17 eV (deep traps) due to the fluorine diffusion. Due to its thermal stability with a high decomposition temperature (around 400 C under air and 510 C
under nitrogen) and due to its good resistivity at low frequency (1015e1017 U m 1), parylene-VT4 constitutes a very attractive polymer for microelectronic applications as low k dielectric. Moreover, when
parylene-VT4 is subjected to an annealing, the dielectric properties can be still more improved.|
|Notes: ||Kahouli, A (reprint author), [Show the Organization-Enhanced name(s)] Univ Grenoble 1, Grenoble Elect Engn Lab, G INP, CNRS, 25 Rue Martyrs,BP 166, F-38042 Grenoble 9, France.
|ISI #: ||000331347500004|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2015|
|Appears in Collections: ||Research publications|
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