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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/16007

Title: Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells
Authors: BRAMMERTZ, Guy
Buffiere, M.
Oueslati, S.
ElAnzeery, H.
Ben Messaoud, Khaled
Sahayaraj, S.
Koeble, C.
MEURIS, Marc
POORTMANS, Jef
Issue Date: 2013
Citation: APPLIED PHYSICS LETTERS, 103 (16), (ART N° 163904)
Abstract: We have fabricated Cu2ZnSnSe4-CdS-ZnO solar cells with a total area efficiency of 9.7%. The absorber layer was fabricated by selenization of sputtered Cu10Sn90, Zn, and Cu multilayers. A large ideality factor of the order of 3 is observed in both illuminated and dark IV-curves, which seems to point in the direction of complex recombination mechanisms such as recombination through fluctuating potentials in the conduction and valence bands of the solar cell structure. A potential barrier of about 135 meV in the device seems to be responsible for an exponential increase of the series resistance at low temperatures, but at room temperature, the effect of this barrier remains relatively small. The free carrier density in the absorber is of the order of 10(15) cm(-3) and does not vary much as the temperature is decreased. (C) 2013 AIP Publishing LLC.
URI: http://hdl.handle.net/1942/16007
DOI: 10.1063/1.4826448
ISI #: 000326148700098
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2014
Appears in Collections: Research publications

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