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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/15422

Title: Preparation of epitaxial films of the transparent conductive oxide Al:ZnO by reactive high-pressure sputtering in Ar/O2 mixtures
Authors: Van Gompel, M.
Conings, B.
Monroy, K. L. Jimenez
D'Haen, J.
Gilissen, K.
D'Olieslaeger, M.
Van Bael, M. K.
Wagner, P.
Issue Date: 2013
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (5), p. 1013-1018
Abstract: Transparent conductive metal oxides are interesting materials for various optoelectronic applications including solar cells and flat panel displays. This study focuses on the in situ deposition of aluminum-doped zinc oxide (AZO) thin layers on c-axis oriented sapphire substrates by dc sputtering and on the structural and electrical characterization. The films have a typical thickness of 90nm and a roughness of 10nm root mean square. An Al/Zn ratio of 2.4at% Al was determined by X-ray photoelectron spectroscopy. X-ray diffraction shows a preferential growth in the (0002) c-axis direction. Films have an average transparency of 90% in the visible-light spectrum, a room-temperature resistivity of 3.7x103cm and a carrier mobility of 6.7 cm(2) V-1 s(-1).
Notes: Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Inst Mat Res IMO, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/15422
DOI: 10.1002/pssa.201200986
ISI #: 000319151900030
ISSN: 1862-6300
Category: A1
Type: Journal Contribution
Validation: ecoom, 2014
Appears in Collections: Research publications

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