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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/15379

Title: Surface plasma pretreatment for enhanced diamond nucleation on AlN
Authors: POBEDINSKAS, Paulius
DEGUTIS, Giedrius
DEXTERS, Wim
JANSSEN, Wiebke
JANSSENS, Stoffel
CONINGS, Bert
RUTTENS, Bart
D'HAEN, J.
BOYEN, Hans-Gerhard
Hardy, A.
VAN BAEL, Marlies
HAENEN, Ken
Issue Date: 2013
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 102 (20), p. 201609
Abstract: The surface of polycrystalline aluminum nitride (AlN) thin films is exposed to different gas discharge plasmas (N-2, O-2, and CF4) followed by a water-based colloidal seeding of ultra-dispersed nanodiamond particles. Fluorination of the AlN surface enhances the seeding density, whereas the oxidized surface does not yield any nucleation sites. In the former case, the seeding density improves by almost three orders of magnitude as compared to the untreated and N-2 pretreated samples, and allows to grow pinhole-free nanocrystalline diamond film on AlN. Finally, we demonstrate a route towards selective diamond growth on AlN thin films by employing CF4 plasma pretreatment together with photolithography. (C) 2013 AIP Publishing LLC.
Notes: [Pobedinskas, P.; Degutis, G.; Dexters, W.; Janssen, W.; Janssens, S. D.; Conings, B.; Ruttens, B.; D'Haen, J.; Boyen, H. -G.; Hardy, A.; Van Bael, M. K.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Pobedinskas, P.; Janssen, W.; Janssens, S. D.; Ruttens, B.; D'Haen, J.; Boyen, H. -G.; Hardy, A.; Van Bael, M. K.; Haenen, K.] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. paulius.pobedinskas@uhasselt.be; ken.haenen@uhasselt.be
URI: http://hdl.handle.net/1942/15379
DOI: 10.1063/1.4807591
ISI #: 000320619300030
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2014
Appears in Collections: Research publications

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