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|Title: ||Silver-assisted Etching of Silicon Nanowires|
|Authors: ||GIELIS, Sven|
van der Veen, M. H.
De Gendt, S.
Vereecken, P. M.
|Issue Date: ||2011|
|Publisher: ||ELECTROCHEMICAL SOC INC|
|Citation: ||Djokic, S Stickney, JL (Ed.). ELECTROLESS DEPOSITION PRINCIPLES, ACTIVATION, AND APPLICATIONS, p. 49-58|
|Abstract: ||Silicon nanowires are attractive for photovoltaic applications where they can be used along with bulk silicon in an all-Si tandem solar cell. The larger band gap, caused by the quantum confinement effect in narrow silicon nanowires (<5 nm), provides a more efficient light absorption. The most common processes for nanowire synthesis are rather expensive and require high temperatures, high vacuum and hazardous precursors. A simple and cheap method is the silver-assisted electroless Si etching process. A silicon substrate is selectively etched in HF based solutions with the help of silver particles which are deposited beforehand or in-situ. Both the etch process and the deposition of silver particles were studied. The silver nanoparticles were deposited by electroless deposition (galvanic displacement) from HF and non-HF containing solutions. The effects of silver coverage, Si doping and illumination on the Si etching process were investigated. The experimental observations were used to get more insight into the mechanism.|
|Notes: ||Gielis, S (reprint author), Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium.|
|ISI #: ||000309449900005|
|Type: ||Proceedings Paper|
|Validation: ||ecoom, 2014|
|Appears in Collections: ||Research publications|
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