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|Title: ||Thin-film polycrystalline-silicon solar cells on high-temperature glass made by aluminium-induced crystallization of amorphous silicon|
|Authors: ||Van Gestel, D.|
|Issue Date: ||2006|
|Citation: ||Amorphous and Polycrystalline Thin Film Silicon Science and Technology. p. A26-04-....|
|Series/Report: ||MRS symposium Proceedings, 910|
|Abstract: ||Efficient polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Alumnium-induced crytallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperature seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-SI solar cells. AIC needs layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass.|
|ISI #: ||000245670700103|
|Type: ||Proceedings Paper|
|Validation: ||ecoom, 2008|
|Appears in Collections: ||Research publications|
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