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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/14778

Title: Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing
Authors: Frigeri, C.
Serenyi, M.
Khanh, N. Q.
Csik, A.
Nasi, L.
Erdelyi, Z.
Beke, D. L.
BOYEN, Hans-Gerhard
Issue Date: 2013
Citation: APPLIED SURFACE SCIENCE, 267, p. 30-34
Abstract: The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing. (C) 2012 Elsevier B. V. All rights reserved.
Notes: [Frigeri, C.; Nasi, L.] CNR IMEM Inst, I-43100 Parma, Italy. [Serenyi, M.; Khanh, N. Q.] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary. [Csik, A.] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary. [Erdelyi, Z.; Beke, D. L.] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary. [Boyen, H. -G.] Hasselt Univ, Inst Mat Res, Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/14778
DOI: 10.1016/j.apsusc.2012.05.030
ISI #: 000314881900008
ISSN: 0169-4332
Category: A1
Type: Journal Contribution
Validation: ecoom, 2014
Appears in Collections: Research publications

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