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|Title: ||Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing|
|Authors: ||Frigeri, C.|
Khanh, N. Q.
Beke, D. L.
|Issue Date: ||2013|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||APPLIED SURFACE SCIENCE, 267, p. 30-34|
|Abstract: ||The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing. (C) 2012 Elsevier B. V. All rights reserved.|
|Notes: ||[Frigeri, C.; Nasi, L.] CNR IMEM Inst, I-43100 Parma, Italy. [Serenyi, M.; Khanh, N. Q.] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary. [Csik, A.] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary. [Erdelyi, Z.; Beke, D. L.] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary. [Boyen, H. -G.] Hasselt Univ, Inst Mat Res, Diepenbeek, Belgium.|
|ISI #: ||000314881900008|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2014|
|Appears in Collections: ||Research publications|
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