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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/1460

Title: Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel
Authors: De Vusser, S.
Schols, S.
Steudel, S.
Genoe, J.
LUTSEN, Laurence
Heremans, P.
Issue Date: 2006
Publisher: American Institute of Physics
Citation: APPLIED PHYSICS LETTERS, 89(22). p. 223504-...
Abstract: The authors have realized a light-emitting organic field-effect transistor. Excitons are generated at the interface between a n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The p-n heterostructure is at a distance of several microns from the metal electrodes. Therefore, the exciton and photon quenching in this device is reduced. Numerical simulations fit well with the experimental data and show that the light-emitting zone can move within the transistor channel. (c) 2006 American Institute of Physics.
URI: http://hdl.handle.net/1942/1460
DOI: 10.1063/1.2392937
ISI #: 000242538500121
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2007
Appears in Collections: Research publications

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