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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/14442

Title: Thickness dependent residual stress in sputtered AlN thin films
Authors: Pobedinskas, Paulius
Bolsee, Jean-Christophe
Dexters, Wim
Ruttens, Bart
Mortet, Vincent
D'Haen, Jan
Manca, Jean V.
Haenen, Ken
Issue Date: 2012
Publisher: ELSEVIER SCIENCE SA
Citation: THIN SOLID FILMS, 522, p. 180-185
Abstract: Thin aluminium nitride (AIN) films of different thickness are deposited by DC-pulsed magnetron sputtering under identical conditions on sapphire (0001) and silicon (100) substrates. An investigation of the residual stress, morphology and structural properties is carried out. The thickness of the films covers the range from 17 nm to 3.9 μm. A higher compressive residual stress is measured for the thinner films and the presence of a stress gradient is proven. X-ray diffraction (XRD) studies show that all AIN films are achieved with perfect c-axis orientation perpendicular to the film surface and that the films are biaxially strained. XRD rocking curves reveal that AIN films on sapphire are highly oriented for all film thicknesses, whereas AIN film growth on silicon starts highly disoriented and the film quality improves with film thickness. Surface analysis by atomic force microscopy shows a continuous film roughening and decrease of grain boundary density with increasing film thickness.
Notes: [Pobedinskas, Paulius; Bolsee, Jean-Christophe; Dexters, Wim; Ruttens, Bart; Mortet, Vincent; D'Haen, Jan; Manca, Jean V.; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Ruttens, Bart; Mortet, Vincent; D'Haen, Jan; Manca, Jean V.; Haenen, Ken] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. [Mortet, Vincent] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France.
URI: http://hdl.handle.net/1942/14442
DOI: 10.1016/j.tsf.2012.08.015
ISI #: 000310782000035
ISSN: 0040-6090
Category: A1
Type: Journal Contribution
Validation: ecoom, 2013
Appears in Collections: Research publications

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