www.uhasselt.be
DSpace

Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/14376

Title: Characterization of Modification of 193-nm Photoresist by HBr Plasma
Authors: Vereecke, G.
CLAES, Monica
Le, Q. T.
KESTERS, Els
Struyf, H.
CARLEER, Robert
ADRIAENSENS, Peter
Issue Date: 2011
Publisher: ELECTROCHEMICAL SOC INC
Citation: ELECTROCHEMICAL AND SOLID STATE LETTERS, 14 (10), p. H408-H410
Abstract: HBr plasma treatments are used to decrease surface line edge roughness (LER) of patterned photoresist (PR). In this work the modification of two 193-nm photoresists by an HBr plasma treatment was characterized by Fourier Transform Infrared (FTIR) spectroscopy, H-1-NMR (Nuclear Magnetic Resonance) and gel permeation chromatography (GPC). PR modification was shown to follow similar schemes as the degradation of poly(methyl methacrylate) (PMMA) by UV light. Beside the cleavage of ester side-groups, this study showed extensive scission of PR chains, which will contribute to LER reduction by increasing PR chains mobility. However chain scission was accompanied by cross-linking, which may put a limit to the surface-smoothening potential of this technique. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609838] All rights reserved.
Notes: [Vereecke, G.; Claes, M.; Le, Q. T.; Kesters, E.; Struyf, H.] IMEC, B-3001 Heverlee, Belgium. [Carleer, R.; Adriaensens, P.] Univ Hasselt, IMO Div Chem, B-3590 Diepenbeek, Belgium. guy.vereecke@imec.be
URI: http://hdl.handle.net/1942/14376
DOI: 10.1149/1.3609838
ISI #: 000295211600024
ISSN: 1099-0062
Category: A1
Type: Journal Contribution
Validation: ecoom, 2012
Appears in Collections: Research publications

Files in This Item:

There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.