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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/1413

Title: The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond
Authors: DEFERME, Wim
Tanasa, G.
Amir, J.
Flipse, C.F.J.
Issue Date: 2006
Publisher: Elsevier
Citation: DIAMOND AND RELATED MATERIALS, 15(4-8). p. 687-691
Abstract: In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphology and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD (microwave plasma enhanced chemical vapour deposition) reactor containing a H2 or a H2 / O2 mixture. A comparison is made between (100)-oriented CVD diamond films hydrogenated with and without a small addition of oxygen (1%). X-ray Photoelectron Spectroscopy (XPS) and UV Photoelectron Spectroscopy (UPS) measurements point to the presence of O-atoms at the (sub)-surface of the diamond film. The measured conductivity is significantly different for the two processes of hydrogenation. Annealing experiments point out that the samples, which were terminated using the H2 / O2 mixture are still conductive enough after annealing at 410 °C to enable STM experiments. Here, we discuss the mechanism for STM imaging of H2 / O2 treated diamond films, associated with surface states induced by the oxygen incorporation.
URI: http://hdl.handle.net/1942/1413
DOI: 10.1016/j.diamond.2005.12.016
ISI #: 000239157000048
ISSN: 0925-9635
Category: A1
Type: Journal Contribution
Validation: ecoom, 2007
Appears in Collections: Research publications

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