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|Title: ||Gadolinium -niobates and -tantalates: Amorphous High-k Materials by Aqueous CSD|
|Authors: ||Dewulf, D.|
Van Elshocht, S.
De Dobbelaere, C.
Wang, W. C.
Afanas'ev, V. V.
De Gendt, S.
Van Bael, M.K.
|Issue Date: ||2012|
|Publisher: ||ELECTROCHEMICAL SOC INC|
|Citation: ||JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 159 (6), p. G75-G79|
|Abstract: ||In this work, compositional series of Gd-Nb-oxides and Gd-Ta-oxides are investigated as new potential high-k materials. Ultrathin oxide films in the range of 5-25 nm are deposited by spincoating. XRD and AFM show that the films are amorphous and smooth (RMS < 1 nm). Dielectric constants are derived from capacitance voltage (CV) measurements and EOT extraction. K values of the Gd-Nb-Ox series range from 13-16 while higher k values are obtained for the Gd-Ta-Ox series ranging from 15-19. For the Gd-Nb-Ox series, a higher k value is obtained for the most Gd-rich composition, while the opposite trend for the Gd-Ta-Ox series is noticed. Furthermore, the Gd-Ta-Ox shows the lowest leakages, as concluded from current-voltage (IV) measurements. A higher Gd content leads to decreased leakage, concurrent with increased band gaps.|
|Notes: ||[Dewulf, D.; Hardy, A.; De Dobbelaere, C.; Van Bael, M. K.] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Van Elshocht, S.; De Gendt, S.] IMEC VZW, B-3001 Heverlee, Belgium. [Wang, W. C.; Badylevich, M.; Afanas'ev, V. V.] Univ Leuven, Semicond Phys Lab, Dept Phys & Astron, B-3001 Heverlee, Belgium. [De Gendt, S.] KULeuven, Dept Chem, B-3001 Heverlee, Belgium.|
|ISI #: ||000304140700067|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2013|
|Appears in Collections: ||Research publications|
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