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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13791

Title: Gadolinium -niobates and -tantalates: Amorphous High-k Materials by Aqueous CSD
Authors: Dewulf, D.
Hardy, A.
Van Elshocht, S.
De Dobbelaere, C.
Wang, W. C.
Badylevich, M.
Afanas'ev, V. V.
De Gendt, S.
Van Bael, M.K.
Issue Date: 2012
Publisher: ELECTROCHEMICAL SOC INC
Citation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 159 (6), p. G75-G79
Abstract: In this work, compositional series of Gd-Nb-oxides and Gd-Ta-oxides are investigated as new potential high-k materials. Ultrathin oxide films in the range of 5-25 nm are deposited by spincoating. XRD and AFM show that the films are amorphous and smooth (RMS < 1 nm). Dielectric constants are derived from capacitance voltage (CV) measurements and EOT extraction. K values of the Gd-Nb-Ox series range from 13-16 while higher k values are obtained for the Gd-Ta-Ox series ranging from 15-19. For the Gd-Nb-Ox series, a higher k value is obtained for the most Gd-rich composition, while the opposite trend for the Gd-Ta-Ox series is noticed. Furthermore, the Gd-Ta-Ox shows the lowest leakages, as concluded from current-voltage (IV) measurements. A higher Gd content leads to decreased leakage, concurrent with increased band gaps.
Notes: [Dewulf, D.; Hardy, A.; De Dobbelaere, C.; Van Bael, M. K.] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Van Elshocht, S.; De Gendt, S.] IMEC VZW, B-3001 Heverlee, Belgium. [Wang, W. C.; Badylevich, M.; Afanas'ev, V. V.] Univ Leuven, Semicond Phys Lab, Dept Phys & Astron, B-3001 Heverlee, Belgium. [De Gendt, S.] KULeuven, Dept Chem, B-3001 Heverlee, Belgium.
URI: http://hdl.handle.net/1942/13791
DOI: 10.1149/2.072206jes
ISI #: 000304140700067
ISSN: 0013-4651
Category: A1
Type: Journal Contribution
Validation: ecoom, 2013
Appears in Collections: Research publications

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