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Title: Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films
Authors: HARDY, An
Van Elshocht, S.
DE DOBBELAERE, Christopher
Hadermann, J.
Pourtois, G.
De Gendt, S.
Afanas'ev, V. V.
Van Bael, M. K.
Issue Date: 2012
Citation: MATERIALS RESEARCH BULLETIN, 47 (3), p. 511-517
Abstract: Ultrathin bismuth titanate films (Bi2Ti2O7, 5-25 nm) are deposited onto SiO2/Si substrates by aqueous chemical solution deposition and their evolution during annealing is studied. The films crystallize into a preferentially oriented, pure pyrochlore phase between 500 and 700 degrees C, depending on the film thickness and the total thermal budget. Crystallization causes a strong increase of surface roughness compared to amorphous films. An increase of the interfacial layer thickness is observed after anneal at 600 degrees C, together with intermixing of bismuth with the substrate as shown by TEM-EDX. The band gap was determined to be similar to 3 eV from photoconductivity measurements and high dielectric constants between 30 and 130 were determined from capacitance voltage measurements, depending on the processing conditions. (C) 2012 Elsevier Ltd. All rights reserved.
Notes: [Hardy, A.; De Dobbelaere, C.; Van Bael, M. K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Hardy, A.; Van Bael, M. K.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. [Van Elshocht, S.; Pourtois, G.; De Gendt, S.] IMEC VZW, Heverlee, Belgium. [Hadermann, J.] Univ Antwerp, EMAT, Antwerp, Belgium. [De Gendt, S.] KULeuven, Dept Chem, Heverlee, Belgium. [Afanas'ev, V. V.] KULeuven, Dept Phys, Heverlee, Belgium. an.hardy@uhasselt.be
URI: http://hdl.handle.net/1942/13614
DOI: 10.1016/j.materresbull.2012.01.001
ISI #: 000301994100001
ISSN: 0025-5408
Category: A1
Type: Journal Contribution
Validation: ecoom, 2013
Appears in Collections: Research publications

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