www.uhasselt.be
DSpace

Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13012

Title: Impurity impact ionization avalanche in p-type diamond
Authors: Mortet, Vincent
Soltani, A.
Issue Date: 2011
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 99(20)
Abstract: Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics.
Notes: [Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France. vmortet@laas.fr
URI: http://hdl.handle.net/1942/13012
DOI: 10.1063/1.3662403
ISI #: 000297786500028
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2012
Appears in Collections: Research publications

Files in This Item:

There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.