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|Title: ||Impurity impact ionization avalanche in p-type diamond|
|Authors: ||Mortet, Vincent|
|Issue Date: ||2011|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 99(20)|
|Abstract: ||Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics.|
|Notes: ||[Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France.
|ISI #: ||000297786500028|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2012|
|Appears in Collections: ||Research publications|
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