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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12845

Title: Optical detection of deep electron traps in poly(p-phenylene vinylene) light-emitting diodes
Authors: Kuik, Martijn
GORIS, Ludwig
Begemann, Eline J.
LUTSEN, Laurence
BLOM, Dirk
Issue Date: 2011
Citation: Applied physics letters, 99 (18)
Abstract: The trap-limited electron currents in poly(p-phenylene vinylene) (PPV) derivatives can be modeled using a Gaussian trap distribution that is positioned approximately 0.75 eV below the lowest unoccupied molecular orbital (LUMO) of PPV. Photothermal deflection spectroscopy measurements and internal photo-emission spectroscopy measurements confirm the claim of a Gaussian shaped trap distribution centered at 0.75 eV below the LUMO of PPV. Additionally, two PPV derivatives that differ in the number of conformational defects incorporated during synthesis exhibit identical electron trapping behavior, showing that the traps do not originate from extrinsic impurities of the synthesis or defects in the polymer chains. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3656713]
Notes: [Kuik, M; Begemann, EJ; Blom, PWM] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands. [Vandenbergh, J; Goris, L; Vanderzande, DJM; Manca, JV] Univ Hasselt, Inst Mat Res, IMO IMOMEC, BE-3590 Diepenbeek, Belgium. [Blom, PWM] Holst Ctr, NL-5656 AE Eindhoven, Netherlands. [Lutsen, L; Vanderzande, DJM] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium, m.kuik@rug.nl
URI: http://hdl.handle.net/1942/12845
DOI: 10.1063/1.3656713
ISI #: 000296659400089
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2012
Appears in Collections: Research publications

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