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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12004

Title: In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates
Authors: Devloo-Casier, Kilian
Dendooven, Jolien
Ludwig, K.F.
Detavernier, Christophe
Issue Date: 2011
Citation: APPLIED PHYSICS LETTERS, 98(231905). p. 1-3
Abstract: The initial growth of HfO2 was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO2 was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H2O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.
URI: http://hdl.handle.net/1942/12004
DOI: 10.1063/1.3598433
ISI #: 000291658900019
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2013
Appears in Collections: Research publications

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