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|Title: ||Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes|
|Authors: ||Barkad, H.A.|
De Jaeger, J-C
|Issue Date: ||2010|
|Publisher: ||IOP PUBLISHING LTD|
|Citation: ||JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43(46)|
|Abstract: ||Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at - 100 V dc bias for large device area as high as 3.1 mm(2). It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (similar to 6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL (R) software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.|
|Notes: ||[Barkad, H. A.; Mattalah, M.; Gerbedoen, J-C; Rousseau, M.; De Jaeger, J-C] Univ Lille 1, IEMN, UMR CNRS 8520, F-59652 Villeneuve Dascq, France. [BenMoussa, A.] ROB, STCE, B-1180 Brussels, Belgium. [Mortet, V.; Haenen, K.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Soltani, A.] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Benbakhti, B.] Univ Glasgow, DEEE, Glasgow G12 8LT, Lanark, Scotland. [Moreau, M.] USTL, LASIR, F-59652 Villeneuve Dascq, France. [Dupuis, R.] Georgia Inst Technol, CCS SECE, Atlanta, GA 30332 USA. GTL, UMI GT CNRS 2958, F-57070 Metz, France.
|ISI #: ||000283857000007|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2011|
|Appears in Collections: ||Research publications|
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