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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11111

Title: Atomic Layer Deposition of Gadolinium Aluminate using Gd((PrCp)-Pr-i)(3), TMA, and O-3 or H2O
Authors: Adelmann, Christoph
Pierreux, Dieter
Swerts, Johan
Franquet, Alexis
Brijs, Bert
Moussa, Alain
Conard, Thierry
VAN BAEL, Marlies
Maes, Jan W.
Jurczak, Malgorzata
Kittl, Jorge A.
Van Elshocht, Sven
Issue Date: 2010
Citation: CHEMICAL VAPOR DEPOSITION, 16 (4-6). p. 170-178
Abstract: For future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-K material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric permittivity with a large band gap. We demonstrate the atomic layer deposition (ALD) of GdxAl2O3 layers using Gd((PrCp)-Pr-i)(3), trimethyl-aluminum (TMA), and H2O or O-3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better GdxAl2-xO3 film properties than O-3, although the accessible composition range is limited because of the hygroscopic nature of Gd2O3.
Notes: [Adelmann, Christoph; Swerts, Johan; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Jurczak, Malgorzata; Kittl, Jorge A.; Van Elshocht, Sven] IMEC VZW, B-3001 Louvain, Belgium. [Pierreux, Dieter; Maes, Jan W.] ASM Belgium, B-3001 Louvain, Belgium. [Dewulf, Dann; Hardy, An; Van Bael, Marlies K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Dewulf, Dann; Hardy, An; Van Bael, Marlies K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. adelmann@imec.be
URI: http://hdl.handle.net/1942/11111
DOI: 10.1002/cvde.200906833
ISI #: 000279984800008
ISSN: 0948-1907
Category: A1
Type: Journal Contribution
Validation: ecoom, 2011
Appears in Collections: Research publications

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