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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11111

Title: Atomic Layer Deposition of Gadolinium Aluminate using Gd((PrCp)-Pr-i)(3), TMA, and O-3 or H2O
Authors: Adelmann, Christoph
Pierreux, Dieter
Swerts, Johan
DEWULF, Dann
HARDY, An
TIELENS, Hilde
Franquet, Alexis
Brijs, Bert
Moussa, Alain
Conard, Thierry
VAN BAEL, Marlies
Maes, Jan W.
Jurczak, Malgorzata
Kittl, Jorge A.
Van Elshocht, Sven
Issue Date: 2010
Publisher: WILEY-V C H VERLAG GMBH
Citation: CHEMICAL VAPOR DEPOSITION, 16 (4-6). p. 170-178
Abstract: For future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-K material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric permittivity with a large band gap. We demonstrate the atomic layer deposition (ALD) of GdxAl2O3 layers using Gd((PrCp)-Pr-i)(3), trimethyl-aluminum (TMA), and H2O or O-3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better GdxAl2-xO3 film properties than O-3, although the accessible composition range is limited because of the hygroscopic nature of Gd2O3.
Notes: [Adelmann, Christoph; Swerts, Johan; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Jurczak, Malgorzata; Kittl, Jorge A.; Van Elshocht, Sven] IMEC VZW, B-3001 Louvain, Belgium. [Pierreux, Dieter; Maes, Jan W.] ASM Belgium, B-3001 Louvain, Belgium. [Dewulf, Dann; Hardy, An; Van Bael, Marlies K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Dewulf, Dann; Hardy, An; Van Bael, Marlies K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. adelmann@imec.be
URI: http://hdl.handle.net/1942/11111
DOI: 10.1002/cvde.200906833
ISI #: 000279984800008
ISSN: 0948-1907
Category: A1
Type: Journal Contribution
Validation: ecoom, 2011
Appears in Collections: Research publications

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